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NCV8405, NCV8405A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating
Drain ? to ? Source Voltage Internally Clamped
Symbol
V DSS
Value
42
Unit
V
Drain ? to ? Gate Voltage Internally Clamped
Gate ? to ? Source Voltage
(R G = 1.0 M W )
V DGR
V GS
42
" 14
V
V
Continuous Drain Current
I D
Internally Limited
Power Dissipation ? SOT ? 223 Version
Power Dissipation ? DPAK Version
Thermal Resistance ? SOT ? 223 Version
Thermal Resistance ? DPAK Version
@ T A = 25 ° C (Note 1)
@ T A = 25 ° C (Note 2)
@ T T = 25 ° C (Note 1)
@ T A = 25 ° C (Note 1)
@ T A = 25 ° C (Note 2)
@ T C = 25 ° C (Note 1)
Junction ? to ? Ambient Steady State (Note 1)
Junction ? to ? Ambient Steady State (Note 2)
Junction ? to ? Tab Steady State (Note 1)
Junction ? to ? Ambient Steady State (Note 1)
Junction ? to ? Ambient Steady State (Note 2)
Junction ? to ? Case Steady State (Note 1)
P D
R q JA
R q JA
R q JT
R q JA
R q JA
R q JT
1.0
1.7
11.4
2.0
2.5
40
130
72
11
60
50
3.0
W
° C/W
Single Pulse Drain ? to ? Source Avalanche Energy
(V DD = 40 V, V G = 5.0 V, I PK = 2.8 A, L = 80 mH, R G(ext) = 25 W , TJ = 25 ° C)
E AS
275
mJ
Load Dump Voltage
V LD = V A + V S (V GS = 0 and 10 V, R I = 2.0 W , R L = 6.0 W , t d = 400 ms)
V LD
53
V
Operating Junction Temperature
Storage Temperature
T J
T stg
? 40 to 150
? 55 to 150
° C
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface ? mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06 ″ thick).
2. Surface ? mounted onto 2 ″ sq. FR4 board (1 ″ sq., 1 oz. Cu, 0.06 ″ thick).
+
I D
DRAIN
I G
+
VGS
?
GATE
SOURCE
VDS
?
Figure 1. Voltage and Current Convention
http://onsemi.com
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